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FDN5630 Datasheet(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # FDN5630
Description  N-Channel 60-V (D-S) MOSFET
PDF  7 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

FDN5630 Datasheet(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
MOSFET SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VDS = 0 V, ID = 250 µA
60
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
55
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
13
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
µA
VGS = 10 V, ID = 1.9 A
75
85
VDS = 60 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
8
A
Drain-Source On-State Resistancea
RDS(on)
Ω
VGS = 4.5 V, ID = 1.7 A
86
96
Forward Transconductancea
gfs
VDS = 15V, ID = 1.9 A
5
S
Dynamicb
Input Capacitance
Ciss
VDS = 30 V, VGS = 0 V, f = 1 MHz
1
80
pF
Output Capacitance
Coss
2
2
Reverse Transfer Capacitance
Crss
1
3
Total Gate Charge
Qg
VDS = 30 V, VGS = 10 V, ID = 1.9 A
4.
2
6.
1
nC
VDS = 30 V, VGS = 4.5 V, ID = 1.9 A
2.
1
3.
2
Gate-Source Charge
Qgs
0.
7
Gate-Drain Charge
Qgd
1
Gate Resistance
Rg
f = 1 MHz
0.6
2.
2
5.
1
Ω
Turn-On Delay Time
td(on)
VDD = 30 V, RL = 20 Ω
ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω
46
ns
Rise Time
tr
10
15
Turn-Off Delay Time
td(off)
10
15
Fall Time
tf
710.5
Turn-On Delay Time
td(on)
VDD = 30 V, RL = 20 Ω
ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω
15
23
ns
Rise Time
tr
16
24
Turn-Off Delay Time
td(off)
11
17
Fall Time
tf
11
17
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
2.
19
A
Pulse Diode Forward Currenta
ISM
7
Body Diode Voltage
VSD
IS = 1.5 A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C
15
23
ns
Body Diode Reverse Recovery Charge
Qrr
10
15
nC
Reverse Recovery Fall Time
ta
12
ns
Reverse Recovery Rise Time
tb
3
m
Rev:2023A2
2
N-Channel 60-V (D-S) MOSFET
FDN5630



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