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FDN5630 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # FDN5630
Description  N-Channel 60-V (D-S) MOSFET
PDF  7 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

FDN5630 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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N-Channel 60-V (D-S) MOSFET
APPLICATIONS
•
Battery Switch
•
DC/DC Converter
PRODUCT SUMMARY
VDS (V)
RDS(on) (mΩ)
ID (A)
a
Qg (Typ.)
60
85 at V
GS = 10 V
4.0
2.
1 nC
96 at V
GS = 4.5 V
3.8
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 1
20 °C/W.
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unle
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
4.0
A
TC = 70 °C
3.4
TA = 25 °C
3.
1b, c
TA = 70 °C
2.5b, c
Pulsed Drain Current
IDM
12
Continuous Source-Drain Diode Current
TC = 25 °C
IS
1.39
TA = 25 °C
0.91b, c
Avalanche Current
L = 0.1 mH
IAS
6
Single-Pulse Avalanche Energy
EAS
1.8
mJ
Maximum Power Dissipation
TC = 25 °C
PD
1.66
W
TC = 70 °C
1.06
TA = 25 °C
1.09b, c
TA = 70 °C
0.7b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
≤ 5 s
RthJA
90
115
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
60
75
S
N-Channel MOSFET
G
D
FDN5630
Rev:2023A2
1
SOT–23
1. GATE
2. SOURCE
3. DRAIN


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