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IRLR210ATM Datasheet(PDF) 1 Page - BYCHIP ELECTRONICS CO., LIMITED

Part # IRLR210ATM
Description  N-channel Enhancement Mode Power MOSFET
PDF  5 Pages
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Manufacturer  BYCHIP [BYCHIP ELECTRONICS CO., LIMITED]
Direct Link  http://www.bychip.cn/
Logo BYCHIP - BYCHIP ELECTRONICS CO., LIMITED

IRLR210ATM Datasheet(HTML) 1 Page - BYCHIP ELECTRONICS CO., LIMITED

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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
200
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
5.0
A
TC = 100 °C
4.0
Pulsed Drain Currenta
IDM
20
Linear Derating Factor
0.33
W/°C
Linear Derating Factor (PCB Mount) e
0.020
Single Pulse Avalanche Energy b
EAS
161
mJ
Repetitive Avalanche Current a
IAR
4.8
A
Repetitive Avalanche Energy a
EAR
4.2
mJ
Maximum Power Dissipation
TC = 25 °C
PD
42
W
Maximum Power Dissipation (PCB mount) e
TA = 25 °C
2.5
Peak Diode Recovery dV/dt c
dV/dt
5.0
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
Soldering Recommendations (Peak temperature) d
for 10 s
260
N-channel Enhancement Mode Power MOSFET
Features
 VDS=
200V, ID= 30 A
RDS(ON) <
850 mΩ @ VGS = 10V
RDS(ON) <
950 mΩ @ VGS =4.5V
●
Advanced Trench Technology
●
Provide Excellent RDS(ON) and Low Gate
Charge
●
Lead Free and Green Available
100% UIS TESTED!
100% ΔVds TESTED!
General Features
www.bychip.cn
Pin Assignment
TO-252-2L Top View
Schematic Diagram
IRLR210ATM
v1.0


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