NDS331N datasheet(1/5 Pages) EVVOSEMI

Part #	NDS331N

Description	N-Channel Enhancement Mode MOSFET

PDF	5 Pages

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Manufacturer	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

Direct Link	https://www.evvosemi.com

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Description

The NDS331N uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = 20V ID =2.3 A

RDS(ON) < 60mΩ@ VGS=4.5V

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

NDS331N

SOT-23

A2SHB

3000

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±12

V

Drain Current-Continuous

ID

2.3

A

Drain Current-Pulsed (Note 1)

IDM

16

A

Maximum Power Dissipation

PD

0.9

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

139

℃

/W

! "

!

"

! "

!

"

PIN2 D

PIN1 G

PIN3 S

SOT-23

N-Channel MOSFET

NDS331N

N-Channel Enhancement Mode MOSFET

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NDS331N Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

NDS331N Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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