Parameter

Symbol

Condition

Min Typ

Max

Unit

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

20

22

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±12V,VDS=0V

-

-

±100

nA

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.5

0.75

1.2

V

Drain-Source On-State Resistance

RDS(ON)

VGS=2.5V, ID=2.0A

-

54

m

72

Ω

VGS=4.5V, ID=2.3A

-

48

m

60

Ω

Forward Transconductance

gFS

VDS=5V,ID=2.3A

-

8

-

S

Input Capacitance

Clss

VDS=10V,VGS=0V,

F=1.0MHz

-

260

-

PF

Output Capacitance

Coss

-

48

-

PF

Reverse Transfer Capacitance

Crss

-

27

-

PF

Turn-on Delay Time

td(on)

VDD=10V, RL=3.3Ω

VGS=4.5V,RGEN=6Ω

-

2.5

-

nS

Turn-on Rise Time

tr

-

3.2

-

nS

Turn-Off Delay Time

td(off)

-

21

-

nS

Turn-Off Fall Time

tf

-

3

-

nS

Total Gate Charge

Qg

VDS=10V,ID=2.3A,

VGS=4.5V

-

2.9

5

nC

Gate-Source Charge

Qgs

-

0.4

-

nC

Gate-Drain Charge

Qgd

-

0.6

-

nC

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=2.3A

-

0.75

1.2

V

Diode Forward Current (Note 2)

IS

-

-

3.3

A

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production

N-Channel Enhancement Mode MOSFET

Electrical Characteristics (TA=25℃unless otherwise noted)

NDS331N