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SCN68661 Datasheet(PDF) 3 Page - NXP Semiconductors |
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SCN68661 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 19 page ![]() Philips Semiconductors Product specification SCN2661/SCN68661 Enhanced programmable communications interface (EPCI) 1994 Apr 27 3 DC ELECTRICAL CHARACTERISTICS1, 2, 3 SYMBOL PARAMETER TEST CONDITIONS LIMITS UNIT SYMBOL PARAMETER TEST CONDITIONS Min Typ Max UNIT Input voltage VIL VIH Low High 2.0 0.8 V V Output voltage VOL VOH4 Low High IOL = 2.2mA IOH = -400µA 2.4 0.4 V V IIL Input leakage current VIN = 0 to 5.5V 10 µA 3-State output leakage current ILH ILL Data bus high Data bus low VO = 4.0V VO = 0.45V 10 10 µA µA ICC Power supply current 150 mA NOTES: 1. Over recommended free-air operating temperature range and supply voltage range unless otherwise specified. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions. 2. All voltages measurements are referenced to ground. All time measurements are at the 50% level for inputs (except tBRH and tBRL) and at 0.8V and 2.0V for outputs. Input levels swing between 0.4V and 2.4V, with a transition time of ≤ 20ns maximum. 3. Typical values are at +25 °C, typical supply voltages and typical processing parameters. 4. INTR, TxRDY, RxRDY and TxEMT/DSCHG outputs are open-drain. CAPACITANCE TA = 25°C, VCC = 0V SYMBOL PARAMETER TEST CONDITIONS LIMITS UNIT SYMBOL PARAMETER TEST CONDITIONS Min Typ Max UNIT Capacitance CIN COUT CI/O Input Output Input/Output fC = 1MHz Unmeasured pins tied to ground 20 20 20 pF pF pF |
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