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TDA1072AT Datasheet(PDF) 2 Page - NXP Semiconductors

Part # TDA1072AT
Description  AM receiver circuit
PDF  21 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA1072AT Datasheet(HTML) 2 Page - NXP Semiconductors

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March 1989
2
Philips Semiconductors
Product specification
AM receiver circuit
TDA1072AT
GENERAL DESCRIPTION
The TDA 1072AT integrated AM receiver circuit performs the active and part of the filtering functions of an AM radio
receiver. It is intended for use in mains-fed home receivers and car radios. The circuit can be used for oscillator
frequencies up to 50 MHz and can handle RF signals up to 500 mV. RF radiation and sensitivity to interference are
minimized by an almost symmetrical design. The voltage-controlled oscillator provides signals with extremely low
distortion and high spectral purity over the whole frequency range even when tuning with variable capacitance diodes.
If required, band switching diodes can easily be applied. Selectivity is obtained using a block filter before the IF amplifier.
Features
• Inputs protected against damage by static discharge
• Gain-controlled RF stage
• Double balanced mixer
• Separately buffered, voltage-controlled and temperature-compensated oscillator, designed for simple coils
• Gain-controlled IF stage with wide AGC range
• Full-wave, balanced envelope detector
• Internal generation of AGC voltage with possibility of second-order filtering
• Buffered field strength indicator driver with short-circuit protection
• AF preamplifier with possibilities for simple AF filtering
• Electronic standby switch.
QUICK REFERENCE DATA
PACKAGE OUTLINE
16-lead mini-pack; plastic (SO16; SOT109A); SOT109-1; 1996 August 13.
PARAMETER
CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage range
VP
7.5
−
10
V
Supply current range
IP
15
−
26
mA
RF input voltage for
S
+N/N = 6 dB at m = 30%
VI
−
1.5
−µV
RF input voltage for 3%
total harmonic distortion
(THD) at m = 80%
VI
−
500
−
mV
AF output voltage with
VI = 2 mV; fI = 1 MHz;
m = 30% and fm = 400 Hz
VO(AF)
−
310
−
mV
AGC range: change of VI
for 1 dB change of VO(AF)
−
86
−
dB
Field strength indicator
voltage at VI = 500 mV;
RL(9) = 2.7 kΩ
VIND
−
2.8
−
V



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