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APTC60DAM18CTG Datasheet(PDF) 6 Page - Microsemi Corporation

Part # APTC60DAM18CTG
Description  Boost chopper SiC FWD diode Super Junction MOSFET Power Module
PDF  7 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTC60DAM18CTG Datasheet(HTML) 6 Page - Microsemi Corporation

  APTC60DAM18CTG Datasheet HTML 1Page - Microsemi Corporation APTC60DAM18CTG Datasheet HTML 2Page - Microsemi Corporation APTC60DAM18CTG Datasheet HTML 3Page - Microsemi Corporation APTC60DAM18CTG Datasheet HTML 4Page - Microsemi Corporation APTC60DAM18CTG Datasheet HTML 5Page - Microsemi Corporation APTC60DAM18CTG Datasheet HTML 6Page - Microsemi Corporation APTC60DAM18CTG Datasheet HTML 7Page - Microsemi Corporation  
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APTC60DAM18CTG
www.microsemi.com
6 – 7
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
40
80
120 160
200 240
ID, Drain Current (A)
VDS=400V
RG=1.2Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
0
40
80
120
160
200
240
ID, Drain Current (A)
VDS=400V
RG=1.2Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
6
7
8
9
10
0
40
80
120
160
200
240
ID, Drain Current (A)
VDS=400V
RG=1.2Ω
TJ=125°C
L=100µH
Eon
Eoff
0
5
10
15
20
02.557.5
10
12.5
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=400V
ID=143A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
140
160
30
50
70
90
110
130
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=400V
D=50%
RG=1.2Ω
TJ=125°C
TC=75°C



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