APTC60DAM18CTG

www.microsemi.com

1 – 7

CR1

VBUS

NTC2

0/VBU S

VBUS SENSE

G2

S2

NTC1

Q2

OUT

VBUS

OUT

OUT

NTC2

NTC1

0/VBUS

S2

S2

G2

G2

VBUS

SENSE

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

Drain - Source Breakdown Voltage

600

V

143

Continuous Drain Current

107

Pulsed Drain current

572

A

Gate - Source Voltage

±30

V

Drain - Source ON Resistance

18

m

Ω

Maximum Power Dissipation

833

W

Avalanche current (repetitive and non repetitive)

20

A

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

1800

mJ

Application

•

AC and DC motor control

•

Switched Mode Power Supplies

•

Power Factor Correction

Features

•

-

-

Low Miller capacitance

-

Ultra low gate charge

-

Avalanche energy rated

•

FWD SiC Schottky Diode

-

Zero reverse recovery

-

Zero forward recovery

-

Temperature Independent switching behavior

-

Positive temperature coefficient on VF

•

Kelvin source for easy drive

•

Very low stray inductance

-

Symmetrical design

-

Lead frames for power connections

•

Internal thermistor for temperature monitoring

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

•

RoHS compliant

Boost chopper

SiC FWD diode

Super Junction

MOSFET Power Module