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US2MA Datasheet(PDF) 2 Page - ON Semiconductor |
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US2MA Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() US2AA−US2MA www.onsemi.com 2 Table 2. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Unit US2 AA US2 BA US2 DA US2 FA US2 GA US2 JA US2 KA US2 MA VRRM Repetitive Peak Reverse Voltage 50 100 200 300 400 600 800 1000 V VRMS RMS Reverse Voltage 35 70 140 210 280 420 560 700 V VDC DC Blocking Voltage 50 100 200 300 400 600 800 1000 V IF(AV) Average Forward Rectified Current 1.5 A IFSM Peak Forward Surge Current, 8.3 ms Single Half−Sine Wave, Superimposed on Rated Load 50 A TJ Operating Junction Temperature Range −55 to +150 °C TSTG Storage Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 3. THERMAL CHARACTERISTICS (NOTE 1) (Values are at TA = 25°C unless otherwise noted) Symbol Parameter Value Unit RqJA Typical Thermal Resistance, Junction−to−Ambient 189 °C/W YJL Typical Thermal Characteristics, Junction−to−Lead (with Reference to Cathode Pin) 31 °C/W 2. Device mounted at minimum pad. Table 4. ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) Symbol Parameter Value Unit US2 AA US2 BA US2 DA US2 FA US2 GA US2 JA US2 KA US2 MA VF Maximum Instantaneous Forward Voltage (Note2) at Rated IF(AV) 1.0 1.3 1.7 V IR Maximum Re- verse Current at Rated VR TJ = 25°C 5 mA TJ = 125°C 100 trr Maximum Reverse Recovery Time (Note 3) 50 75 ns CJ Typical Junction Capacitance (Note 4) 50 30 pF 3. Pulse test with PW = 300 ms, 1% duty cycle 4. Reverse recovery test conditions: IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A 5. Measured at 1 Mhz and applied reverse voltage of 4.0 V D.C. |
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