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TDA5745TS Datasheet(PDF) 6 Page - NXP Semiconductors |
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TDA5745TS Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 20 page ![]() 1998 Mar 09 6 Philips Semiconductors Preliminary specification Low power mixers/oscillators for hyperband tuners TDA5744; TDA5745 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS CHARACTERISTICS VCC =5V; Tamb =25 °C; unless otherwise specified; measured in Fig.11. SYMBOL PARAMETER MIN. MAX. UNIT IO(n) output current of each pin to ground: for TDA5744; pins 1 to 6, 9 and 13 to 24 −−10 mA for TDA5745; pins 1 to 12, 16 and 19 to 24 −−10 mA tsc(max) maximum short-circuit time (all pins to VCC and all pins to GND and RFGND) − 10 s Tstg IC storage temperature −40 +150 °C Tamb operating ambient temperature −20 +85 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air 119 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VCC supply voltage 4.5 5 5.5 V ICC supply current − 58 65 mA Vsw(VHF) VHF band switching voltage 0 − 2V Vsw(UHF) UHF band switching voltage 3 − VCC V Isw(VHF) VHF band switching current −− 2 µA Isw(UHF) UHF band switching current Vsw(UHF) =5V − 4.5 10 µA IF amplifier S22 output reflection coefficient magnitude −−12.5 − dB phase − 1.4 − deg Rs real part of Zo =Rs +jωLs − 81 −Ω Ls imaginary part of Zo =Rs +jωLs − 9.5 − nH VHF mixer (including IF amplifier) fi(RF) RF input frequency picture carrier frequency 45.25 − 399.25 MHz F noise figure fRF = 50 MHz; see Figs 8 and 9 − 79 dB fRF = 150 MHz; see Figs 8 and 9 − 810 dB fRF = 300 MHz − 911 dB gos optimum source conductance for noise figure fRF =50MHz − 0.7 − mS fRF = 150 MHz − 0.9 − mS fRF = 300 MHz − 1.5 − mS |
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