Preliminary

This is a product that has fixed target specifications but are subject

Ramtron International Corporation

to change pending characterization results.

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

Rev. 1.0

http://www.ramtron.com

Mar. 2007

Page 1 of 15

FM22L16

4Mbit FRAM Memory

Features

4Mbit Ferroelectric Nonvolatile RAM

•

Organized as 256Kx16

•

Configurable as 512Kx8 Using /UB, /LB

•

10

•

NoDelay™ Writes

•

Page Mode Operation to 40MHz

•

Advanced High-Reliability Ferroelectric Process

SRAM Compatible

•

JEDEC 256Kx16 SRAM Pinout

•

55 ns Access Time, 110 ns Cycle Time

Advanced Features

•

Inadvertent Writes

•

Software Programmable Block Write Protect

Superior to Battery-backed SRAM Modules

•

No Battery Concerns

•

Monolithic Reliability

•

True Surface Mount Solution, No Rework Steps

•

Superior for Moisture, Shock, and Vibration

Low Power Operation

•

2.7V – 3.6V Power Supply

•

Low Current Mode (5µA) using ZZ pin

•

18 mA Active Current

Industry Standard Configuration

•

Industrial Temperature -40

° C to +85° C

•

44-pin “Green”/RoHS TSOP-II package

Description

The FM22L16 is a 256Kx16 nonvolatile memory that

reads

and

writes

like

a

standard

SRAM.

A

ferroelectric random access memory or FRAM is

nonvolatile, which means that data is retained after

power is removed. It provides data retention for over

10 years while eliminating the reliability concerns,

functional

disadvantages,

and

system

design

complexities of battery-backed SRAM (BBSRAM).

Fast write timing and unlimited write endurance make

FRAM superior to other types of memory.

In-system operation of the FM22L16 is very similar

to other RAM devices and can be used as a drop-in

replacement for standard SRAM. Read and write

cycles may be triggered by /CE or simply by

changing the address. The FRAM memory is

nonvolatile due to its unique ferroelectric memory

process. These features make the FM22L16 ideal for

nonvolatile memory applications requiring frequent

or rapid writes in the form of an SRAM.

The FM22L16 includes a low voltage monitor that

below a critical threshold. The memory is protected

against an inadvertent access and data corruption

under this condition. The device also features

software-controlled write protection. The memory

array is divided into 8 uniform blocks, each of which

can be individually write protected.

The device is available in a 400 mil 44-pin TSOP-II

surface mount package. Device specifications are

guaranteed over industrial temperature range –40°C

to +85°C.

Pin Configuration

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

A4

A3

A2

A1

A0

A13

A14

DQ0

DQ1

DQ2

VSS

DQ3

DQ4

DQ5

DQ6

DQ7

WE

VDD

A15

A16

A17

CE

A12

/ZZ

OE

A7

A6

A5

VSS

DQ12

DQ11

DQ8

DQ9

DQ10

LB

A8

A9

A10

A11

VDD

UB

DQ13

DQ14

DQ15

Ordering Information

FM22L16-55-TG

55 ns access, 44-pin

“Green”/RoHS TSOP-II