Magnachip Power Technology

MDP08N032TH

Fig. 5. Transfer Characteristics

Fig. 6. Body Diode Forward Voltage

Variation with Source Current and Temperature

Electrical characteristics diagrams

Fig. 1. Output Characteristics

Fig. 2. Static On-Resistance Variation

Fig. 3. On-Resistance vs. Junction Temperature

Fig. 4. On-Resistance vs. Gate to Source Voltage

0

20

40

60

80

100

120

0

0.5

1

1.5

2

V

DS, Drain-Source Voltage [V]

VGS =10V

5.0V

6.0V

0

0.5

1

1.5

2

2.5

-50

-25

0

25

50

75

100

125

150

175

T

J, Junction Temperature [˚C]

※ Notes :

1. V

GS=10V

0

2

4

6

8

10

12

14

16

18

20

3

4

5

6

7

8

9

10

V

GS, Gate to Source Voltage [V]

※ Notes :

I

D=60A

T

J= 25˚C

0

20

40

60

80

100

0

1

2

3

4

5

6

7

8

V

GS, Gate-Source Voltage [V]

T

J= 25˚C

※ Notes :

V

DS=10V

10

10

10

0

0.3

0.6

0.9

1.2

1.5

V

SD, Source-Drain Voltage [V]

0

2

1

T

J= 175˚C

※ Notes :

V

GS=0V

8.0V

2

2.5

3

3.5

4

0

40

80

120

I

D, Drain Current [A]

V

GS=10V

T

J= -55˚C

T

J= 175˚C

T

J= 175˚C

T

J= -55˚C

T

J= 25˚C

T

J= -55˚C

Jul. 2021. Rev. 1.2

4 / 7

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Product data sheet