Magnachip Power Technology

MDP08N032TH

Electrical characteristics diagrams

Fig. 11. Transient Thermal Impedance

Fig. 9. Safe Operating Area

Fig. 10. Maximum Drain Current vs. Case Temperature

Fig. 7. Gate Charge

Fig. 8. Capacitance

0

2

4

6

8

10

0

10

20

30

40

50

60

70

80

90

100

110

Q

G, Total Gate Charge [nC]

※ Notes :

1. V

DS=40V

2. I

D=60A

10

10

10

10

0

10

20

30

40

50

60

70

80

V

DS, Drain-Source Voltage [V]

Ciss

Coss

Crss

Ciss=Cgs+Cgd (Cds = shorted)

Coss=Cds+Cgd

Crss=Cgd

※ Notes :

1. V

GS=0V

2. f=1MHz

1

2

4

3

10

10

10

10

10

10

10

10

V

DS, Drain-Source Voltage [V]

Max. I

DM

Max. continuous

I

D

-1

0

1

2

0

1

3

2

100us

DC

10ms

1ms

10us

Operation in This Area

is Limited by R

DS(on)

Single Pulse

T

J(MAX)=175℃

T

C=25℃

0

50

100

150

200

25

50

75

100

125

150

175

T

C, Case Temperature [˚C]

10

10

10

10

10

10

10

10

t

p, Rectangular Pulse Duration [sec]

-4

-3

-2

-1

0

-2

-1

0

0.02

0.01

Single Pulse

0.1

D=0.5

0.3

0.05

Limited by Package

Single Pulse

T

J=Max rated

T

C=25℃

※ Notes :

Duty Factor, D=t

p/T

PEAK T

J=PDM*ZthJC+TC

Jul. 2021. Rev. 1.2

5 / 7

All information provided in this document is subject to legal disclaimers

Product data sheet