STW13NK80Z datasheet(3/14 Pages) STMICROELECTRONICS

3 / 14 page

STW13NK80Z

Electrical ratings

3/14

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

800

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

7.6

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

Ptot

Total dissipation at TC = 25°C

230

Derating Factor

1.85

W/°C

EAS

(2)

ISD ≤12A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

Single pulse avalanche energy

4.5

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

Table 2.

Thermal data

Rthj-case

Thermal resistance junction-case max

0.54

°C/W

Rthj-amb

Thermal resistance junction-ambient max

°C/W

Maximum lead temperature for soldering purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

450

Table 4.

Gate-source zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

BVGSO

Gate-source breakdown

voltage

Igs=± 1mA (open drain)

STW13NK80Z Datasheet(PDF) 3 Page - STMicroelectronics

STW13NK80Z Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL