STW13NK80Z datasheet(5/14 Pages) STMICROELECTRONICS

5 / 14 page

STW13NK80Z

Electrical characteristics

5/14

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1mA, VGS =0

800

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = max rating

VDS = max rating,

TC = 125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100µA

3.75

4.5

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 6A

0.53

0.65

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Forward

transconductance

VDS = 15V, ID =6A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

3480

312

Coss eq

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Equivalent output

capacitance

VGS = 0V, VDS = 0V

to 720V

150

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 400V, ID = 6A

RG =4.7Ω VGS = 10V

(see Figure 13)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 640V, ID = 12A,

VGS = 10V, RG =4.7Ω

(see Figure 14)

115

155

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