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MCP6G01-E/MS Datasheet(PDF) 4 Page - Microchip Technology

Part # MCP6G01-E/MS
Description  110 關A Selectable Gain Amplifier
PDF  38 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP6G01-E/MS Datasheet(HTML) 4 Page - Microchip Technology

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MCP6G01/1R/1U/2/3/4
DS22004B-page 4
© 2006 Microchip Technology Inc.
DIGITAL ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = 25°C, VDD = +1.8V to +5.5V, VSS = GND, G = +1 V/V, VIN = (0.3V)/G,
RL = 100 kΩ to VDD/2, CL = 60 pF, GSEL = VDD/2, and CS is tied low.
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
VCSL
0
—
0.2VDD
VCS = 0V
CS Input Current, Low
ICSL
—30—
pA
CS = 0V
CS High Specifications
CS Logic Threshold, High
VCSH
0.8VDD
—VDD
VCS = VDD
CS Input Current, High
ICSH
—0.8
—
µA
CS = VDD = 5.5V
Quiescent Current per Amplifier,
Shutdown Mode (IDD)
IDD_SHDN
—
120
—
pA
CS = VDD, MCP6G03
Quiescent Current per Amplifier,
Shutdown Mode (ISS) (Note 3)
ISS_SHDN
—
–2.4
—
µA
CS = VDD = 1.8V, MCP6G03
ISS_SHDN
—
–7.2
—
µA
CS = VDD = 5.5V, MCP6G03
CS Dynamic Specifications
Input Capacitance
CCS
—10—
pF
Input Rise/Fall Times
tCSRF
——
2
µs
(Note 2)
CS Low to Amplifier Output High
Turn-on Time
tCSON
—
40
—
µs
G = +1 V/V, VDD = 1.8V, VIN = 0.9VDD
CS = 0.2VDD to VOUT = 0.8VDD
tCSON
—
7
—
µs
G = +1 V/V, VDD = 5.5V, VIN = 0.9VDD
CS = 0.2VDD to VOUT = 0.8VDD
CS High to Amplifier Output High-Z
Turn-off Time
tCSOFF
—
30
—µs
G = +1 V/V, VIN = VDD/2,
CS = 0.8VDD to VOUT = 0.1VDD/2
Hysteresis
VCSHY
—0.40
—
V
VDD = 1.8V
VCSHY
—0.55
—
V
VDD = 5.5V
GSEL Specifications (Note 1)
GSEL Logic Threshold, Low
VGSL
0.15VDD
—
0.35VDD
V
Gain changes between 1 and 10,
IGSEL = 0
GSEL Logic Threshold, High
VGSH
0.65VDD
—
0.85VDD
V
Gain changes between 1 and 50,
IGSEL = 0
GSEL Input Current, Low
IGSL
–10
—
–1.5
µA
GSEL voltage = 0.3VDD
GSEL Input Current, High
IGSH
+1.5
—
+10
µA
GSEL voltage = 0.7VDD
GSEL Dynamic Specifications (Note 1)
Input Capacitance
CGSEL
—8—
pF
Input Rise/Fall Times
tGSRF
——
10
µs
(Note 2)
Hysteresis
VGSHY
—45—
mV
VDD = 1.8V
VGSHY
—95—
mV
VDD = 5.5V
GSEL Low to Valid Output Time,
G = +1 to +10 Select
tGSL1
—
10
—µs
VIN = 150 mV,
GSEL = 0.25VDD to VOUT = 1.37V
GSEL Middle to Valid Output Time,
G = +10 to +1 Select
tGSM10
—
12
—µs
VIN = 150 mV,
GSEL = 0.25VDD to VOUT = 0.28V
GSEL High to Valid Output Time,
G = +1 to +50 Select
tGSH1
—
9
—µs
VIN = 30 mV,
GSEL = 0.75VDD to VOUT = 1.35V
GSEL Middle to Valid Output Time,
G = +50 to +1 Select
tGSM50
—
8
—µs
VIN = 30 mV,
GSEL = 0.75VDD to VOUT = 0.18V
Note 1:
GSEL is a tri-level input pin. The gain is 10 when its voltage is low, 1 when it is at mid-suppy, and 50 when it is high.
2:
Not tested in production. Set by design and characterization.
3:
ISS_SHDN includes the current through the CS pin, RL and RLAD, and excludes digital switching currents. The block dia-
gram on the from page shows these current paths (through VSS).



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