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MCP1403-E/P Datasheet(PDF) 11 Page - Microchip Technology |
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MCP1403-E/P Datasheet(HTML) 11 Page - Microchip Technology |
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11 / 22 page ![]() © 2007 Microchip Technology Inc. DS22022B-page 11 MCP1403/4/5 Placing a ground plane beneath the MCP1403/4/5 will help as a radiated noise shield as well as providing some heat sinking for power dissipated within the device. 4.5 Power Dissipation The total internal power dissipation in a MOSFET driver is the summation of three separate power dissipation elements. 4.5.1 CAPACITIVE LOAD DISSIPATION The power dissipation caused by a capacitive load is a direct function of frequency, total capacitive load, and supply voltage. The power lost in the MOSFET driver for a complete charging and discharging cycle of a MOSFET is: 4.5.2 QUIESCENT POWER DISSIPATION The power dissipation associated with the quiescent current draw depends upon the state of the input pin. The MCP1403/4/5 devices have a quiescent current draw when both inputs are high of 1.0 mA (typ) and 0.15 mA (typ) when both inputs are low. The quiescent power dissipation is: 4.5.3 OPERATING POWER DISSIPATION The operating power dissipation occurs each time the MOSFET driver output transitions because for a very short period of time both MOSFETs in the output stage are on simultaneously. This cross-conduction current leads to a power dissipation describes as: PT PL PQ PCC ++ = Where: PT = Total power dissipation PL = Load power dissipation PQ = Quiescent power dissipation PCC = Operating power dissipation PL fCT × VDD 2 × = Where: f = Switching frequency CT = Total load capacitance VDD = MOSFET driver supply voltage PQ IQH DIQL 1 D – () × + × () V DD × = Where: IQH = Quiescent current in the high state D = Duty cycle IQL = Quiescent current in the low state VDD = MOSFET driver supply voltage PCC CC f × VDD × = Where: CC = Cross-conduction constant (A*sec) f = Switching frequency VDD = MOSFET driver supply voltage |
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