(VDD = 5V, VSS = 0V, VCM = 0V, VOUT = VDD/2, RL connected to VDD/2, SHDN = VDD, TA = TMIN to TMAX, unless otherwise noted.

Typical values are at TA = +25°C.) (Notes 2, 3)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Power-Supply Rejection Ratio

PSRR

VDD – 2.4V to 5.5V

E temperature

75

100

dB

MAX4250AAUK

72

Large-Signal Voltage Gain

AV

RL = 10kΩ to VDD/2;

VOUT = 25mV to VDD

– 4.97V

E temperature

80

116

dB

MAX4250AAUK

77

RL = 1kΩ to VDD/2;

VOUT = 150mV to

VDD – 4.75V

E temperature

80

112

MAX4250AAUK

77

Output Voltage Swing

VOUT

|VIN+ - VIN-| ≥ 10mV;

RL = 10kΩ to VDD/2

VDD - VOH

E

8

25

mV

A

30

VOL - VSS

E

7

20

A

25

Output Voltage Swing

VOUT

|VIN+ - VIN-| ≥ 10mV,

RL = 1kΩ to VDD/2

VDD - VOH

E

77

200

mV

A

225

VOL - VSS

E

47

100

A

125

Output Short-Circuit Current

ISC

68

mA

Output Leakage Current

ILEAK

Shutdown mode (SHDN = VSS),

VOUT = VSS to VDD (Note 2)

0.001

1.0

µA

SHDN

Logic Low

VIL

(Note 2)

0.2 x VDD

V

SHDN

Logic High

VIH

(Note 2)

0.8 x VDD

V

SHDN

Input Current

IIL/IIH

SHDN

= VSS = VDD (Note 2)

0.5

1.5

µA

Input Capacitance

11

pF

Gain-Bandwidth Product

GBW

MAX4250–MAX4254

3

MHz

MAX4249/MAX4255/MAX4256/MAX4257

22

Slew Rate

SR

MAX4250–MAX4254

0.3

V/µs

MAX4249/MAX4255/MAX4256/MAX4257

2.1

Peak-to-Peak Input-Noise

Voltage

enP-P

f = 0.1Hz to 10Hz

760

nVP-P

Input Voltage-Noise Density

en

f = 10Hz

27

nV/√Hz

f = 1kHz

8.9

f = 30kHz

7.9

Input Current-Noise Density

in

f = 1kHz

0.5

fA/√Hz

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Analog Devices │ 3

MAX4249–MAX4257

UCSP, Single-Supply, Low-Noise,

Low-Distortion, Rail-to-Rail Op Amps

Electrical Characteristics (continued)