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LIS2L02AQ3TR Datasheet(PDF) 6 Page - STMicroelectronics |
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LIS2L02AQ3TR Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 17 page ![]() 2 Mechanical and Electrical Specifications LIS2L02AQ3 6/17 CD00059664 3 Guaranteed by wafer level test and measurement of initial offset and sensitivity 4 Zero-g level and sensitivity are essentially ratiometric to supply voltage 5 Guaranteed by design 6 Contribution to the measuring output of the inclination/acceleration along any perpendicular axis 7 Self test “output voltage change” is defined as Vout(Vst=Logic1)-Vout(Vst=Logic0) 8 Self test “output voltage change” varies cubically with supply voltage 9 When full-scale is set to ±6g, self-test “output voltage change” is one third of the specified value 10 Minimum resonance frequency Fres=1.5KHz. Sensor bandwidth=1/(2* π*110KΩ*Cload) with Cload>1nF. 2.2 Electrical Characteristics Note: 1 The product is factory calibrated at 3.3V 2 Typical specifications are not guaranteed 3 Minimum resonance frequency Fres=1.5KHz. Sensor bandwidth=1/(2* π*110KΩ*Cload) with Cload>1nF Table 3. Electrical Characteristics1 (Temperature range -40°C to +85°C) All the parameters are specified @ Vdd =3.3V, T=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ.2 Max. Unit Vdd Supply Voltage 2.4 3.3 5.25 V Idd Supply Current mean value PD pin connected to GND 0.85 1.5 mA IddPdn Supply Current in Power Down Mode rms value PD pin connected to Vdd 25 µA Vst Self Test Input Logic 0 level 0 0.8 V Logic 1 level 2.2 Vdd V Rout Output Impedance 80 110 140 k Ω Cload Capacitive Load Drive3 320 pF Ton Turn-On Time at Exit From Power Down Mode Cload in µF 550*Cload+0.3 ms Top Operating Temperature Range -40 +85 °C |
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