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NCE40P40K Datasheet(PDF) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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NCE40P40K Datasheet(HTML) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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1 / 5 page  P-channel Enhancement Mode Power MOSFET Features VDS= -40V, ID= -40A RDS(ON) < 12mΩ @ VGS = -10V RDS(ON) < 15mΩ @ VGS = -4.5V ● Advanced Trench Technology ● Provide Excellent RDS(ON) and Low Gate Charge ● Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -40 A Drain Current-Continuous(TC=100℃) ID (100℃) -25 A Pulsed Drain Current IDM -50 A Maximum Power Dissipation PD 80 W Derating factor 0.53 W/℃ Single pulse avalanche energy (Note 5) AS E 544 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJC 1.88 ℃ /W www.bychip.cn Pin Assignment Schematic Diagram TO-252-2L Top View NCE40P40K v1.0 |
Similar Part No. - NCE40P40K |
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