Symbol

Parameter

Condition

Min.

Typ.

Max.

Unit

Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated)

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250μA

-20

--

--

V

IDSS

Zero Gate Voltage Drain Current

VDS=-20V,VGS=0V

--

--

-1

μA

Zero Gate Voltage Drain Current(Tj=125

℃)

VDS=-20V,VGS=0V

--

--

-100

μA

IGSS

Gate-Body Leakage Current

VGS=±12V,VDS=0V

--

--

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS,ID=-250μA

-0.3

-

2.0

V

RDS(on)

Drain-Source On-State Resistance

③

VGS=-4.5V, ID=-10A

--

15

mΩ

RDS(on)

Drain-Source On-State Resistance ③

VGS=-2.5V, ID=-10A

--

20

mΩ

RDS(on)

Drain-Source On-State Resistance ③

VGS=-1.8V, ID=-8A

--

32

mΩ

Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated)

Ciss

Input Capacitance

VDS=-10V,VGS=0V,

f=1MHz

4655

pF

Coss

Output Capacitance

465

pF

Crss

Reverse Transfer Capacitance

335

pF

Rg

Gate Resistance

f=1MHz

0.2

5

Ω

Qg

Total Gate Charge

VDS=-10V,ID=-10A,

VGS=-4.5V

--

39

nC

Qgs

Gate-Source Charge

--

8.1

nC

Qgd

Gate-Drain Charge

--

7.8

nC

Switching Characteristics

Td(on)

Turn-on Delay Time

VDD=-10V,

ID=-10A,

RG=2.7Ω,

VGS=-10V

--

7.6

--

ns

Tr

Turn-on Rise Time

--

44

--

ns

Td(off)

Turn-Off Delay Time

--

75

--

ns

Tf

Turn-Off Fall Time

--

27

--

ns

Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)

VSD

Forward on voltage

ISD=-10A,VGS=0V

--

-0.8

-1.2

V

Trr

Reverse Recovery Time

Tj=25℃,Isd=-10A,

VGS=0V

di/dt=-100A/μs

--

14

28

ns

Qrr

Reverse Recovery Charge

--

4.7

9.4

nC

NOTE:

① Repetitive rating; pulse width limited by max junction temperature.

② Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = -13A, VGS =-10V. Part not recommended for use above this value

③ Pulse width ≤ 380μs; duty cycle≤ 2%.

Electrical Characteristics

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NCE4963

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