M58LT128HSB datasheet(1/110 Pages) STMICROELECTRONICS

Part #	M58LT128HSB

Description	128-Mbit (8 Mb 횞16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories

PDF	110 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 110 page

March 2007

Rev 1

1/110

1

M58LT128HST

M58LT128HSB

128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst)

1.8 V supply, Secure Flash memories

Features

■

Supply voltage

–VDD = 1.7 V to 2.0 V for program, erase

and read

–VDDQ = 2.7 V to 3.6 V for I/O buffers

–VPP = 9 V for fast program

■

Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 52 MHz

– Asynchronous Page Read mode

– Random Access: 85 ns

■

Synchronous Burst Read Suspend

■

Programming time

– 2.5 µs typical Word program time using

Buffer Enhanced Factory Program

command

■

Memory organization

– Multiple Bank memory array: 8-Mbit Banks

– Parameter Blocks (top or bottom location)

■

Dual operations

– program/erase in one Bank while read in

others

– No delay between read and write

operations

■

Block protection

– All blocks protected at power-up

– Any combination of blocks can be protected

with zero latency

– Absolute Write Protection with VPP = VSS

■

Security

– Software security features

– 64-bit unique device number

– 2112-bit user programmable OTP Cells

■

Common Flash Interface (CFI)

■

100 000 program/erase cycles per block

■

Electronic signature

– Manufacturer code: 20h

– Top device codes:

M58LT128HST: 88D6h

– Bottom device codes

M58LT128HSB: 88D7h

■

TBGA64 package

– ECOPACK® compliant

TBGA64 (ZA)

10 × 13 mm

BGA

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M58LT128HSB Datasheet(PDF) 1 Page - STMicroelectronics

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