5SDF02D6002 datasheet(2/5 Pages) ABB

2 / 5 page

5SDF 02D6002

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA1108-02 Sep. 01

page 2 of 5

On-state (see Fig. 2, 3)

IFAVM

Max. average on-state current

250 A

IFRMS

Max. RMS on-state current

400 A

Half sine wave, Tc = 85°C

IFSM

Max. peak non-repetitive

3.6 kA

10 ms

Before surge:

surge current

11.4 kA

tp =

1 ms

Tc = Tj = 125°C

⋅10

3 A2stp =

10 ms

After surge:

òI

2dt

Max. surge current integral

⋅10

3 A2stp =

1 ms

≈ 0 V

Forward voltage drop

≤

IF =

1000 A

VF0

Threshold voltage

2.5 V

Approximation for

Slope resistance

2.5 mΩ

IF = 200…4000

Tj = 125°C

Turn-on (see Fig. 4, 5)

Vfr

Peak forward recovery voltage

≤

370 V

di/dt = 1000 A/µs, Tj = 125°C

Turn-off (see Fig. 6)

Irr

Reverse recovery current

≤

260 A

Qrr

Reverse recovery charge

≤

2000 µC

Err

Turn-off energy

≤

-- J

di/dt = 100 A/µs,

Tj = 125 °C,

IF = 1000 A,

VRM = 6000 V,

RS = 22

Ω,CS = 0.22 µF

Thermal (see Fig. 01)

Operating junction temperature range

-40...125°C

Tstg

Storage temperature range

-40...125°C

RthJC

Thermal resistance junction to case

≤

80 K/kW

Anode side cooled

≤

80 K/kW

Cathode side cooled

≤

40 K/kW

Double side cooled

RthCH

Thermal resistance case to heatsink

≤

16 K/kW

Single side cooled

Fm =

10… 12 kN

≤

8 K/kW

Double side cooled

Analytical function for transient thermal impedance.

Ri(K/kW)

20.95

10.57

7.15

1.33

τi(s)

0.396

0.072

0.009

0.0044

)

(t)

thJC

Fm = 10… 12 kN Double side cooled

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