ABB Semiconductors AG reserves the right to change specifications without notice.

=

6000 V

=

250 A

=3.6 kA

=2.5 V

=2.5 mΩ

Ω

Ω

Ω

3000 V

Doc. No. 5SYA1108-02 Sep. 01

• Patented free-floating silicon technology

• Low switching losses

• Optimized for use as snubber diode in high-voltage GTO converters

• Standard press-pack ceramic housing, hermetically cold-welded

• Cosmic radiation withstand rating

Blocking

Repetitive peak reverse voltage

6000 V

Repetitive peak reverse current

≤

50 mA

Permanent DC voltage for 100 FIT

failure rate

3000 V

100% Duty

Permanent DC voltage for 100 FIT

failure rate

3800 V

5% Duty

Ambient cosmic radiation at

sea level in open air.

min.

10 kN

Mounting force

max.

12 kN

a

Acceleration:

Device unclamped

Device clamped

50

200

m/s

2

m/s

2

m

Weight

0.25 kg

Surface creepage distance

≥

30 mm

Air strike distance

≥

20 mm

Fast Recovery Diode

5SDF 02D6002

PRELIMINARY