Datasheet

Please read the Important Notice and Warnings at the end of this document

002-34202 Rev. *B

www.infineon.com

page 1

2023-11-06

CYRS1069G

16-Mb Static RAM with ECC and RADSTOP™

technology

2M × 8

Radiation performance

•Radiation data

-Total dose =200 Krad

- Embedded error-correcting code (ECC) for single-bit error correction[1, 2]

- Soft error rate (both heavy ion and proton) Heavy ions  1× 10-10 upsets/bit-day

- Neutron = 1.5 × 1011 N/cm2

-Dose rate:

•> 3.0 × 108 (rad(Si)/s) (R/W)

•> 2.0 × 109 (rad(Si)/s) (Static)

- Latch up immunity > 60 MeV.cm2/mg (95°C)

•Processing flows

- V Grade - Class V flow in compliance with MIL-PRF 38535

• Prototyping options

- CYPT1069G prototype units with same functional and timing as flight units using non-radiation hardened die

in a 36-pin ceramic flat package

Features

• Temperature ranges

- Military/Space: –55°C to 125°C

•High speed

-tAA = 10 ns

•Low active power

-ICC = 90 mA at 10 ns (typical)

• Low CMOS standby power

-ISB2 = 20 mA (typical)

•1.0 V data retention

• Automatic power-down when deselected

• Transistor-transistor logic (TTL) compatible inputs and outputs

• Easy memory expansion with CE and OE features

• Available in Gold plated lead 36-pin ceramic flat package

Notes

1. This device does not support automatic write-back on error detection.

2. SER FIT Rate < 0.1 FIT/Mb. Refer AN88889 or details.