Datasheet

13

002-34202 Rev. *B

2023-11-06

16-Mb Static RAM with ECC and RADSTOP™ technology

2M × 8

Data retention

10

Data retention

10.1

Data retention characteristics

10.2

Data retention waveform

Figure 3

Data retention waveform

Table 7

Data retention characteristics

Over the operating range

Parameter

Description

Conditions

Min

Max

Unit

VDR

VCCfordataretention

–

1.0

–

V

ICCDR

Data retention current

VCC=VDR,CE>VCC – 0.2 V,

VIN > VCC – 0.2 V or VIN < 0.2 V

–

50.0

mA

tCDR[8]

Chip deselect to data

retention time

–0

–

ns

tR[8, 9]

Operation recovery time

VCC > 2.2 V

10.0

–

ns

VCC < 2.2 V

12.0

–

ns

tCDR

tR

VDR = 1.0 V

DATA RETENTION MODE

VCC(min)

VCC(min)

VCC

CE

Notes

8. Tested initially and after any design or process changes that may affect these parameters.

9. Full device operation requires linear VCC ramp from VDR to VCC(min.) >100s or stable at VCC(min.) >100s.