2SK3702JS

No. A0632-1/5

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

4V drive.

•

Avalanche resistance guarantee.

•

Pb-free type.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

60

V

Gate-to-Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

18

A

Drain Current (Pulse)

IDP

PW≤10µs, duty cycle≤1%

72

A

Allowable Power Dissipation

PD

2.0

W

Tc=25°C20

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *1

EAS

23

mJ

Avalanche Current *2

IAV

18

A

Note : *1 VDD=20V, L=100µH, IAV=18A

*2 L≤100µH, Single pulse

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

60

V

Zero-Gate Voltage Drain Current

IDSS

VDS=60V, VGS=0V

1

Gate-to-Source Leakage Current

IGSS

VGS= ±16V, VDS=0V

±10

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

1.2

2.6

V

Forward Transfer Admittance

yfs

VDS=10V, ID=9A

8

12

S

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=9A, VGS=10V

42

55

mΩ

RDS(on)2

ID=9A, VGS=4V

60

85

mΩ

Marking : K3702

Continued on next page.

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Ordering number : ENA0632

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

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nearest you before using any SANYO Semiconductor products described or contained herein in such

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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

D1306QA TI IM TC-00000378

SANYO Semiconductors

DATA SHEET

2SK3702JS

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications