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P4C174 Datasheet(PDF) 4 Page - Pyramid Semiconductor Corporation

Part # P4C174
Description  HIGH SPEED 8K x 8 CACHE TAG STATIC RAM
PDF  12 Pages
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Manufacturer  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C174 Datasheet(HTML) 4 Page - Pyramid Semiconductor Corporation

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P4C174
Page 4 of 12
Document # SRAM118 REV C
Symbol
t
RC
t
AA
t
OH
t
AC
t
LZ
t
HZ
t
OE
t
OLZ
Read Cycle Time
Address Access
Time
Address Change to
Output Change
Chip Enable LOW to
Output Valid
Chip Enable LOW
to Output LOW-Z (1)
Chip Enable HIGH
to Output HIGH -Z (1)
Output Enable LOW
to Output Valid
Output Enable LOW
to Output LOW-Z (1)
Min
–8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
–15
–20
–10
–12
–25
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
8
3
3
0
AC CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
t
OHZ
Output Enable HIGH
to Output HIGH -Z (1)
t
PU
Chip Enable LOW or
Address Change to
Powerup
t
pUPD
Powerup to
Powerdown
Note:
1. Transition is measured ± 200 mV from steady state voltage with Output Load B.
0
8
8
5
5
5
20
10
3
3
0
0
10
10
5
6
5
20
12
3
3
0
0
12
12
5
6
5
20
15
3
3
0
0
15
15
8
8
5
20
20
3
3
0
0
20
20
8
10
8
20
25
3
3
0
0
25
25
10
12
10
25
ns
ns
ns
Parameter
READ CYCLE NO. 1 (OE
OE
OE
OE
OE CONTROLLED)(2, 3)



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