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TLV75533PDBVR Datasheet(PDF) 23 Page - Texas Instruments |
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TLV75533PDBVR Datasheet(HTML) 23 Page - Texas Instruments |
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23 / 49 page ![]() 8 Device and Documentation Support 8.1 Device Support 8.1.1 Device Nomenclature Table 8-1. Device Nomenclature PRODUCT(1) (2) DESCRIPTION TLV755xx(x)Pyyyz(M3) xx(x) is the nominal output voltage. For output voltages with a resolution of 100mV, two digits are used in the ordering number; otherwise, three digits are used (for example, 28 = 2.8V; 125 = 1.25V). P indicates an active output discharge feature. All members of the TLV755P family actively discharge the output when the device is disabled. yyy is the package designator. z is the package quantity. R is for reel (3000 pieces), T is for tape (250 pieces). M3 is a suffix designator for devices that only use the latest manufacturing flow. (1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the device product folder on www.ti.com. (2) Output voltages from 0.6V to 5V in 50mV increments are available. Contact the factory for details and availability. 8.2 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Notifications to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 8.3 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 8.4 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 8.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 8.6 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. www.ti.com TLV755P SBVS320D – NOVEMBER 2017 – REVISED SEPTEMBER 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 23 Product Folder Links: TLV755P |
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