| Electronic Components Datasheet Search |
|
NEX80809DA Datasheet(PDF) 13 Page - Nexperia B.V. All rights reserved |
|
|
|||||||||||||||||||||||||||||
NEX80809DA Datasheet(HTML) 13 Page - Nexperia B.V. All rights reserved |
|
13 / 21 page ![]() Nexperia NEX8080 series Wide Vcc range multi-mode flyback controller ZCD Auxiliary winding aaa-040379 DRV tZCD_SAMPLE Sample at here Valley moment (VO + Vf) × NAUX/NSEC (VO + Vf) × NAUX/NSEC × RZB/(RZT + RZB) Fig. 17. ZCD voltage detection and valley detection The output voltage OVP and UVP/SCP protection are implemented by comparing the sampled ZCD voltage with different threshold voltages. The output voltage OVP protection is triggered if the sampled ZCD voltage is higher than OVP threshold for seven consecutive cycles. The output voltage short-circuit protection (SCP) is triggered if the sampled ZCD voltage is lower than SCP threshold VZCD_SCP (typically 0.3 V) for seven consecutive cycles. Since the output voltage need time to setup, the UVP/SCP protection is disabled for a tBLK_UVP blanking time during soft start. Due to the leakage inductance of the transformer, there is large ringing waveform at ZCD pin at the beginning of the flyback period. To avoid sampling at this ringing moment, a blanking time is added after the going-low of DRV signal. ZCD sampling is not allowed until this blanking window expires. 9.3.10. Valley switching During QR/DCM/PFM mode, once the magnetizing current decreases to zero, the primary inductor begins oscillating with the parasitic capacitor of the primary MOS. It is ideal to turn on the primary MOS at the valley moment of oscillation to minimize the switching loss. As shown in Fig. 17, when the auxiliary winding voltage becomes negative, ZCD pin is clamped at ~0 V internally, and the current flowing out of ZCD pin is detected. Once the current is larger than IZCD_VALLEY (~9 μA), that moment is identified as a valley moment. Several valley moments may be identified before CLK signal arrives. The valley moment just behind CLK is chosen as the moment to turn on the primary MOS. 9.3.11. Oscillator frequency The NEX8080x is specially designed for wide output voltage range applications. To optimize the efficiency of each output voltage condition, the maximum switching frequency is adjusted according to the target output voltage, as derived by ZCD detection. Different frequency-vs-FB curves are used for different output voltage conditions. As FB voltage decreases, the clamp frequency CLK will decrease until it arrives the minimum limit FMIN (typically 25 kHz, to avoid audible noise), thus a relatively high efficiency is achieved in the whole load range. NEX8080_series Submit document feedback All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2024. All rights reserved Product data sheet Rev. 1 — 30 September 2024 13 / 21 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |