Nexperia

PSC0665K

650 V, 6 A SiC Schottky diode in TO-220-2 R2P

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VR (V)

50

650

450

250

10-7

10-8

10-5

10-6

10-4

IR

(A)

10-9

(1)

(2)

(3)

(4)

(5)

(6)

Pulsed condition:

(1) Tj = 175 °C

(2) Tj = 150 °C

(3) Tj = 125 °C

(4) Tj = 100 °C

(5) Tj = 25 °C

(6) Tj = -55 °C

Fig. 6. Reverse current as a function of reverse

voltage; typical values

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100

200

300

Cd

(pF)

0

VR (V)

10-1

103

102

1

10

f = 1 MHz; Tamb = 25 °C

Fig. 7. Diode capacitance as a function of reverse

voltage; typical values

VR (V)

0

200

400

600

700

500

300

100

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2

4

6

Ec

(µJ)

0

Fig. 8. Capacitance stored energy as a function of

reverse voltage; typical values

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VF (V)

IF

(A)

1/Rdiff

Vth

VF = Vth + Rdiff x IF

Vth = a x Tj + b

Rdiff = c x Tj² + d x Tj + e

a = -1.28E-03 (V/°C)

b = 9.67E-01 (V)

c = 2.24E-06 ( /(°C)²)

d = 3.0E-04 ( /°C)

e = 8.03E-02 ( )

Fig. 9. Simplified forward characteristics mode

PSC0665K

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Product data sheet

19 August 2024

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