PSC0665K

650 V, 6 A SiC Schottky diode in TO-220-2 R2P

19 August 2024

Product data sheet

1. General description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance,

low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in

a Real-2-Pin (R2P) TO-220-2 through-hole power plastic package. The product offers temperature

independent capacitive turn-off, zero recovery switching behavior combined with an outstanding

figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness

expressed in a high IFSM.

2. Features and benefits

• Zero forward and reverse recovery

• Reduced system costs

• Temperature independent fast and smooth switching performance

• Outstanding figure-of-merit (Qc x VF)

• High IFSM capability

• High power density

• System miniaturization

• Reduced EMI

3. Applications

• Switch Mode Power Supply (SMPS)

• AC-DC and DC-DC converter

• Battery charging infrastructure

• Server and telecom power supply

• Uninterruptible Power Supply (UPS)

• Photovoltaic inverters

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF

forward current

ẟ = 1; Tc ≤ 128 °C

-

-

6

A

Static characteristics

VDC

DC blocking voltage

650

-

-

V

Dynamic characteristics

QC

total capacitive charge VR = 400 V; dIF/dt = 200 A/µs; IF ≤ 6 A;

Tj = 25 °C

-

14

-

nC