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PIC16F72 Datasheet(PDF) 11 Page - Microchip Technology

Part # PIC16F72
Description  FLASH Memory Programming Specification
PDF  14 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC16F72 Datasheet(HTML) 11 Page - Microchip Technology

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 2002 Microchip Technology Inc.
Preliminary
DS39588A-page 11
PIC16F72
5.0
PROGRAM/VERIFY MODE ELECTRICAL CHARACTERISTICS
5.1
AC/DC Characteristics
TABLE 5-1:
TIMING REQUIREMENTS FOR PROGRAM/VERIFY MODE
Standard Operating Conditions (unless otherwise stated)
Operating Temperature:
+10°C
≤ TA ≤ +40°C
Operating Voltage:
4.5V
≤ VDD ≤ 5.5V
Characteristics
Sym
Min
Typ
Max
Units
Conditions/Comments
General
VDD level for read and verification
VDD
2.0
5.5
V
VDD level for programming and
erasing
VDDP
4.75
5.25
V
High voltage on MCLR for chip erase
and program write operations
VPP
12.75
13.25
V
(Notes 1, 2)
MCLR rise time (VSS to VPP) for Test
mode entry
tVHHR
1.0
µs
(RB6, RB7) input high level
VIH10.8 VDD
V
Schmitt Trigger input
(RB6, RB7) input low level
VIL10.2 VDD
V
Schmitt Trigger input
Serial Program/Verify
Data in setup time before clock
↓
tset1
100
ns
Data in hold time after clock
↓
thld1
100
ns
Data input not driven to next clock input
(delay required between
command/data or command/command)
tdly1
1.0
µs
Delay between clock
↓ to clock↑ of next
command or data
tdly2
1.0
µs
Clock
↑ to data out valid (during read
data)
tdly3
200
ns
Erase cycle time
tera
30
ms
(Note 3)
Programming cycle time
tprog
1
—
3(4)
ms
Note 1: VPP should be current limited to about 100 mA.
2: VPP must remain above VDDP + 4.0V to remain in Programming mode, while not actually erasing or
programming.
3: The chip erase is self-timed.
4: tprog is expected to be reduced to 1 ms max.



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