Nexperia

PDTC124XM

50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage open base

-

50

V

VEBO

emitter-base voltage

open collector

-

7

V

VI

input voltage

-7

40

V

IO

output current

-

100

mA

ICM

peak collector current

tp ≤ 1 ms; single pulse

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] [2]

-

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Reflow soldering is the only recommended soldering method.

[2] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] [2] -

-

500

K/W

[1] Reflow soldering is the only recommended soldering method.

[2] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.

PDTC124XM

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© Nexperia B.V. 2024. All rights reserved

Product data sheet

23 October 2024

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