Nexperia

PDTC124XM

50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

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IC (mA)

10- 1

102

10

1

1

10

VI(on)

(V)

10- 1

(1)

(3)

(2)

VCE = 0.3 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 3. On-state input voltage as a function of collector

current; typical values

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IC (mA)

10- 2

10

1

10- 1

1

10

VI(off)

(V)

10- 1

(1)

(3)

(2)

VCE = 5 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 4. Off-state input voltage as a function of collector

current; typical values

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

12. Package outline

03-04-03

Dimensions in mm

0.62

0.55

0.55

0.47

0.50

0.46

0.65

0.20

0.12

3

2

1

0.30

0.22

0.30

0.22

1.02

0.95

0.35

Fig. 5. Package outline DFN1006-3 (SOT883)

PDTC124XM

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2024. All rights reserved

Product data sheet

23 October 2024

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