AMMC-5033 datasheet(2/9 Pages) AVAGO

2 / 9 page

AMMC-5033 DC Specifications/Physical Properties[1]

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

First Stage Drain Supply Current

280

320

d1 = 3.5 V, Vg1 = Open, Vgg set for Id2 Typical)

Second Stage Drain Supply Current

500

d2 = 5 V, Vg1 = Open, Vgg set for Id2 Typical)

Vgg

Gate Supply Operating Voltage

-0.75

-0.6

-0.4

d1(Q) + Id2(Q) = 780 (mA))

DETBias

Detector Bias Voltage (Optional)

Vd2

c1(ch-bs)

First Stage Thermal Resistance[2]

°C/W

(Backside Temperature, Tb = 25°C)

c2(ch-bs)

Second Stage Thermal Resistance[2, 3]

°C/W

(Backside Temperature, Tb = 25°C)

Notes:

1. Backside temperature T

b = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (θch-b) = 42°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resis-

tance at backside temperature (Tb) = 25°C calculated from measured data.

3. Channel-to-backside Thermal Resistance (θch-b) = 24°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resis-

tance at backside temperature (Tb) = 25°C calculated from measured data.

AMMC-5033 RF Specifications[4,5]

Tb = 25°C, V

d1 = 3.5 V, Vd2 = 5 V, Id1(Q) = 280 mA, Id2(Q) = 500 mA, Zo = 50 Ω

Lower Band

Mid Band

Upper Band

Specifications

Parameters and

(17.7 - 21 GHz)

(21 - 26.5 GHz)

(26.5 - 32 GHz)

Symbol

Test Condition

Unit

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Gain

Small-Signal Gain[5]

17.5

16.5

18.5

-1dB

Output Power at 1dB Gain

23.5

25.5

26.5

Compression[6]

-3dB

Output Power at 3dB Gain

Compression[6]

OIP

Output Third Order Intercept dBm

29.5

Point;[6]; ∆f = 2 MHz;

Pin = +2 dBm

Input Return Loss[5]

11.5

13.5

out

Output Return Loss[5]

Isolation Min. Reverse Isolation

Notes:

4. Data measured in wafer form T

b = 25°C.

5. 100% on-wafer RF test is done at frequency = 17.7, 21, 26.5 and 32 GHz.

6. 100% on-wafer test frequency = 17.7, 26.5 and 32 GHz.

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