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SC4809B Datasheet(PDF) 10 Page - Semtech Corporation |
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SC4809B Datasheet(HTML) 10 Page - Semtech Corporation |
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10 / 16 page ![]() 10 2005 Semtech Corp. www.semtech.com SC4809A/B/C POWER MANAGEMENT The primary inductance can be calculated given an acceptable current ripple, ∆I L. ∆IL was set to equal one- half the peak primary current. For a CCM flyback design, the peak primary current is calculated: 2 I D 1 1 N I I L max (max) OUT PEAK ∆ + − • = Because the converter is operating in the continuous mode, the maximum peak flux density B MAX, is limited by the saturation flux density, B SAT. Taking all this into consideration, the maximum core size is determined by. 31 . 1 MAX 4 RMS PEAK P B k 420 10 I I L AP • • • • • = where AP = the core area product in cm4, k = winding factor, B MAX ≈ BSAT, The result is compared to the product of the winding area, Aw (cm2), and effective core area, Ae (cm2), listed in the core manufacturer’s data sheet. The minimum number of primary turns is determined by: Ae B 10 I L N MAX 4 PEAK P P • • • = Based upon this result and the predetermined turns ratio, the number of secondary turns is established. The energy stored in the flyback transformer is actually stored in an air gap in the core. This is because the high permeability of the ferrite material can’t store much energy without saturating first. By adding an air gap, the hysteresis curve of the magnetic material is actually tilted, requiring a much higher field strength to saturate the core. The length of the air gap is calculated by: P 2 2 P r o g L 10 Ae ) N ( − • • • µ • µ = l Application Information (Cont.) MOSFET Selection The switching element in a flyback converter must have a voltage rating high enough to handle the maximum input voltage and the reflected secondary voltage, not to mention any leakage inductance induced spike that is inevitably present. Approximate the required voltage rating of the MOSFET using. () () 3 . 1 V V N N V V V D O S P L (max) IN ds • + • + + = where V ds = the required drain to source voltage rating of the MOSFET, V L = the voltage spike due to the leakage inductance of the transformer, estimated to be thirty percent of V IN(MAX), and the additions 1.3 factor includes an overall thirty percent margin. This FET will experience both switching and conduction losses. The conduction losses will be equal to the I2R losses, as shown by: () ) ON ( DS 2 RMS COND R I P • = Switching losses are the result of overlapping drain current and drain to source voltage at turn on and turn off. The total switching losses are estimated based on equation: sw ch PEAK DS SW 2 DS OSS SW f t I V 2 f ) V ( C P • • • + • • = where t ch: ) th ( gs g gd CH V VDD R Q t − • = Diode Selection Schottky rectifiers have a lower forward voltage drop than typical PN devices, making it the rectifier of choice when considering reducing converter losses and improving overall efficiency. Selecting the appropriate Schottky for a specific application depends mainly on the working peak reverse voltage rating and peak repetitive forward current. |
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