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SC251 Datasheet(PDF) 1 Page - Semtech Corporation

Part # SC251
Description  Step-down DC-DC Converter with Bias LDO for WCDMA Amplifi ers
PDF  19 Pages
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Manufacturer  SEMTECH [Semtech Corporation]
Direct Link  http://www.semtech.com
Logo SEMTECH - Semtech Corporation

SC251 Datasheet(HTML) 1 Page - Semtech Corporation

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SC251
Step-down DC-DC Converter with
Bias LDO for WCDMA Amplifiers
POWER MANAGEMENT
May 8, 2006
www.semtech.com
Description
Applications
Features
The SC251 is a synchronous step-down converter designed
for use as an adaptive voltage supply for WCDMA RF
power amplifiers (PAs). An analog control input is used to
adjust the output voltage dynamically between 0.5V and
3.4V using a non-linear transfer function. The non-linear
relationship maximizes total system efficiency by providing
the PA with the minimum voltage it needs to maintain
linearity. For output voltages greater than 3.4V the input
is connected directly to the output via an internal PMOS
switch. An optional gate drive (GD) output to control an
external low on-resistance PMOS switch is also provided
for systems applications that require minimal voltage
drop. The SC251 also provides a 2.85V LDO reference
output that can be used to supply a PA bias input.
Low power and high power modes are provided to match
performance with dual mode PAs. In low power mode the
output voltage follows an exponential relationship with
the VDAC input until it reaches 3.4V. When the VMODE
pin changes state, V
OUT follows an alternate exponential
relationship.
The SC251 is capable of supplying output current up
to 800mA. Standby current is <1μA when the device is
disabled. The internal clock runs at 1MHz so that small
surface mount inductors and capacitors can be used.
V
OUT exponentially proportional to VDAC for maximum
efficiency (patent pending)
Output range and pass-through mode - 0.5V to 3.4V
Output current - 800mA
Shutdown current - < 1μA
LDO PA bias supply - 2.85V, 10mA
Internal clock - 1MHz
Continuous short circuit protection on VOUT
Duty cycle mode - 100%
Internal PMOS bypass transistor
Gate drive available for external bypass transistor
Over 90% efficiency
Low and high power modes for optimum dual-mode
PA efficiency
Switching time (lowest to highest output) < 40μs
Micro-lead frame package MLPD-10, 3mm x 3mm
3G mobile phones - RF PA power supply
WCDMA power amplifier modules
Wireless modems
PA
L1
4.7μH
CIN
10μF
VIN
VOUT
VREF
GND
LX
VDAC
PGND
CREF
1μF
EN
COUT
4.7μF
VIN
2.7 to 5V
2
8
10
7
1
4
6
9
RF Output
RF Input
Vcc
GND
BIAS
ENABLE
VDAC
SC251
VMODE
5
VMODE
GD
3
VOUT
0.5V to VIN
Optional
External Pass-through
MOSFET
Patent Pending
Typical Application Circuit


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