NPN Wideband Silicon RF Transistor

BFU520

www.iscsemi.com

1

DESCRIPTION

·

Low Noise and High Gain

NF = 1.8 dB TYP

@VCE = 10 V, IC = 10 mA, f = 0.9 GHz

·

High Power Gain

MAG = 9 dB TYP.

@VCE = 8 V, IC = 40 mA, f = 1.0 GHz

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

· Applications Requiring High Supply Voltages And High Breakdown Voltages

· Low Noise Amplifiers For ISM Applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

10

V

VEBO

Emitter-Base Voltage

2.5

V

IC

Collector Current-Continuous

120

mA

PC

Collector Power Dissipation

@ TC=25℃

0.2

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 100nA; IE= 0A

20

--

--

V

ICBO

Collector Cutoff Current

VCB= 10V; IE= 0A

--

--

0.1

μ

A

IEBO

Emitter Cutoff Current

VEB= 1V; IC= 0A

--

--

0.1

μ

A