FSL336LR

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4

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Symbol

Parameter

Min

Max

Unit

VDS

Drain Pin Voltage

−0.3

650.0

V

VCC

Supply Voltage

−0.3

26.0

V

VCOMP

VCOMP Pin Voltage

−0.3

Internally Clamped Voltage (Note 1)

V

VFB

Feedback Voltage

−0.3

12.0

V

ILIMIT

Current Limit Pin Voltage

−0.3

12.0

V

IDM

Drain Current Pulsed (Note 2)

−

12

A

EAS

Single Pulsed Avalanche Energy (Note 3)

−

230

mJ

PD

Total Power Dissipation

−

1.25

W

TJ

Operating Junction Temperature (Note 4)

−40

125

°C

Maximum Junction Temperature

−

150

°C

TSTG

Storage Temperature

−55

150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. VCOMP is clamped by internal clamping diode (11 V, ICLAMP_MAX < 100 mA).

2. Repetitive rating: pulse width is limited by maximum junction temperature.

3. L = 51 mH, starting TJ = 25°C.

4. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics.

THERMAL IMPEDANCE (TA = 25°C unless otherwise specified)

Symbol

Characteristic

Value

Unit

qJA

Junction−to−Ambient Thermal Impedance (Note 5)

100

°C/W

5. JEDEC recommended environment, JESD51−2, and test board, JESD51−3, with minimum land pattern.

ESD CAPABILITY

Symbol

Characteristic

Value

Unit

ESD

Human Body Model, ANSI/ESDA/JEDEC JS−001−2012 (Note 6)

4

kV

Charged Device Model, JESD22−C101 (Note 6)

2

6. Meets JEDEC standards ANSI/ESDA/JEDEC JS−001−2012 and JESD 22−C101.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

SENSEFET SECTION

BVDSS

Drain−Source Breakdown Voltage

VCC = 0 V, ID = 250 mA

650

−

−

V

IDSS

Zero Gate Voltage Drain Current

VDS = 520 V, TA = 125°C

−

−

250

mA

RDS(ON)

Drain−Source On−State Resistance

VGS = 10 V, ID = 1 A

−

3.5

4.0

W

CISS

Input Capacitances

VGS = 0 V, VDS = 25 V, f = 1 MHz

−

290

−

pF

COSS

Output Capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

−

45

−

pF

CRSS

Reverse Transfer Capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

−

5.5

−

pF

tr

Rise Time

VDD = 350 V, ID = 3.5 A

−

22

−

ns

tf

Fall Time

VDD = 350 V, ID = 3.5 A

−

19

−

ns

CONTROL SECTION

fOSC

Switching Frequency

VCOMP = 2.5 V

45

50

55

kHz

fM

Frequency Modulation (Note 7)

VCOMP = 2.5 V, Randomly

−

±3

−

kHz

ton.max

Maximum Turn−On Time

VCOMP = 2.5 V

11.2

13.3

15.4

ms