4435 datasheet(1/5 Pages) TUOFENG

Part #	4435

Description	P-Channel 30-V (D-S) MOSFET

PDF	5 Pages

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Manufacturer	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

Direct Link	http://www.sztuofeng.com/?lang=en

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FEATURES

D TrenchFETr Power MOSFET

D Advanced High Cell Density Process

D Lead (Pb)-Free Version is RoHS

Compliant

APPLICATIONS

D Load Switches

D Battery Switch

Available

4435

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

−30

0.020 @ VGS = −10 V

−8.0

−30

0.030 @ VGS = −4.5 V

−5.0

SD

S

D

SD

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

S

G

D

P-Channel MOSFET

Ordering Information: 4435

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

−30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

−8.0

Continuous Drain Current (TJ = 150_C)a

ID

A

Pulsed Drain Current

IDM

−50

A

continuous Source Current (Diode Conduction)a

IS

−2.1

−1.25

Maximum Power Dissipationa

TA = 25_C

PD

2.5

1.5

W

Maximum Power Dissipationa

TA = 70_C

PD

1.6

0.9

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 10 sec

R

40

50

Maximum Junction-to-Ambienta

Steady State

RthJA

70

85

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

18

22

C/W

Notes

a.

Surface Mounted on 1 ” x 1” FR4 Board.

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

1

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