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FGY100T120SWD Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FGY100T120SWD Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISG2166 eq FGY100T120SWD IGBT www.iscsemi.com 1 DESCRIPTION · High Current Capability · Smooth and Optimized Switching · Low Switching Loss APPLICATIONS · Energy Storage System · Boost and Inverter in Solar System · Uninterruptible power supplies (UPS) ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current-Continuous @ TC=25℃ 200 A IC Collector Current-Continuous @ TC=100℃ 100 A ICM Pulsed Collector Current@ TC=25℃ 400 A IF Diode Forward Current @ TC=25℃ 200 A IF Diode Forward Current @ TC=100℃ 100 A PD Power Dissipation @TC=25℃ 866 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance,Junction to Case IGBT 0.17 ℃ /W Rth j-c Thermal Resistance,Junction to Case Diode 0.29 ℃ /W |
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