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GD75PIY120C6SN Datasheet(PDF) 7 Page - StarPower Europe AG |
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GD75PIY120C6SN Datasheet(HTML) 7 Page - StarPower Europe AG |
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7 / 13 page ![]() GD75PIY120C6SN IGBT Module ©2015 STARPOWER Semiconductor Ltd. 11/30/2015 7/13 Preliminary Module Characteristics T C=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit LCE Stray Inductance 40 nH RCC’+EE’ RAA’+CC’ Module Lead Resistance,Terminal to Chip 4.00 3.00 m Ω RthJC Junction-to-Case (per IGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier) Junction-to-Case (per IGBT-brake) Junction-to-Case (per Diode-brake) 0.394 0.602 0.571 0.487 1.071 K/W RthCH Case-to-Heatsink (per IGBT-inverter) Case-to-Heatsink (per Diode-inverter) Case-to-Heatsink (per Diode-rectifier) Case-to-Heatsink (per IGBT-brake) Case-to-Heatsink (per Diode-brake) Case-to-Heatsink (per Module) 0.137 0.210 0.199 0.170 0.373 0.009 K/W M Mounting Torque, Screw:M5 3.0 6.0 N.m G Weight of Module 300 g |
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