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TAS5342LDDVR Datasheet(PDF) 10 Page - Texas Instruments

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Part # TAS5342LDDVR
Description  100 W STEREO DIGITAL AMPLIFIER POWER STAGE
PDF  29 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TAS5342LDDVR Datasheet(HTML) 10 Page - Texas Instruments

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ELECTRICAL CHARACTERISTICS
TAS5342L
SLAS558 – OCTOBER 2007
AUDIO SPECIFICATIONS (PBTL) (continued)
Audio performance is recorded as a chipset consisting of a TAS5518 pwm processor (modulation index limited to 97.7%) and
a TAS5342L power stage. PCB and system configuraton are in accordance with recommended guidelines. Audio frequency =
1kHz, PVDD_x = 32.0 V, GVDD_x = 12 V, RL = 3 Ω, fS = 384 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 10 μH, CDEM
= 1.0 uF, unless otherwise noted.
TAS5342L
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
MAX
PO = 0 W, all half bridges
Pidle
Power dissipation due to idle losses (IPVDD_X)
3
W
switching(2)
(2)
Actual system idle losses are affected by core losses of output inductors.
PVDD_x = 32.0 V, GVDD_X = 12 V, VDD = 12 V, TC (Case temperature) = 25°C, fS = 384 kHz, unless otherwise specified.
TAS5342L
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
MAX
Internal Voltage Regulator and Current Consumption
Voltage regulator, only used as a
VREG
VDD = 12 V
3
3.3
3.6
V
reference node
Operating, 50% duty cycle
7.1
17
IVDD
VDD supply current
mA
Idle, reset mode
5.6
11
50% duty cycle
5.9
12
IGVDD_X
Gate supply current per half-bridge
mA
Reset mode
1
1.8
50% duty cycle, without output filter or load
10.5
20
mA
IPVDD_X
Half-bridge idle current
Reset mode, no switching
594
713
μA
Output Stage MOSFETs
Drain-to-source resistance, Low
RDSon,LS
TJ = 25°C, excludes metallization resistance,
110
125
m
Ω
Side
Drain-to-source resistance, High
RDSon,HS
TJ = 25°C, excludes metallization resistance,
110
125
m
Ω
Side
I/O Protection
Undervoltage protection limit,
Vuvp,G
9.5
V
GVDD_X
Vuvp,hyst
(1)
Undervoltage protection limit,
250
mV
GVDD_X
BSTuvpF
Puts device into RESET when BST
6.11
V
voltage falls below limit
BSTuvpR
Brings device out of RESET when
7.25
V
BST voltage rises above limit
OTW(1)
Overtemperature warning
115
125
135
°C
Temperature drop needed below
OTWHYST
(1)
OTW temp. for OTW to be inactive
25
°C
after the OTW event
OTE(1)
Overtemperature error threshold
145
155
165
°C
OTE-
OTE - OTW differential, temperature
30
°C
OTWdifferential
(1)
delta between OTW and OTE
OLPC
Overload protection counter
fS = 384 kHz
1.25
ms
Resistor—programmable, high-end,
IOC
Overcurrent limit protection
7.9
8.4
A
ROC = 22 kΩ with 1 ms pulse, TC= 75°C
IOCT
Overcurrent response time
150
ns
tACTIVITY
Time for PWM activity detector to
Lack of transistion of any PWM input
13.2
μS
DETECTOR
activate when no PWM is present
(1)
Specified by design
10
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Copyright © 2007, Texas Instruments Incorporated
Product Folder Link(s): TAS5342L



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