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INA950A1MPWTSEP Datasheet(PDF) 13 Page - Texas Instruments |
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INA950A1MPWTSEP Datasheet(HTML) 13 Page - Texas Instruments |
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13 / 33 page ![]() 6.3.3 Low Input Bias Current The INA950-SEP input bias current draws 20μA (typical) even with common-mode voltages as high as 80V. This current enables precision current sensing in applications where the sensed current is small or in applications that require lower input leakage current. 6.3.4 Low VSENSE Operation The INA950-SEP enables accurate current measurement across the entire valid VSENSE range. The zero-drift input architecture of the INA950-SEP provides the low offset voltage and low offset drift required to measure low VSENSE levels accurately across the wide operating temperature of –55°C to +125°C. The capability to measure low sense voltages enables accurate measurements at lower load currents, and also allows reduction of the sense resistor value for a given operating current, which minimizes the power loss in the current-sensing element. 6.3.5 Wide Fixed-Gain Output The INA950-SEP gain error is < 0.1% at room temperature for most gain options, with a maximum drift of 5ppm/°C over the full temperature range of –55°C to +125°C. The INA950-SEP closed-loop gain is set by a precision, low-drift internal resistor network. The ratio of these resistors are excellently matched, although the absolute values can vary significantly. TI does not recommend adding additional resistance around the INA950-SEP to change the effective gain because of this variation. Table 6-1 describes the typical values of the internal gain resistors seen in the functional diagram above. Table 6-1. Fixed Gain Resistors GAIN R1 RL 20 (V/V) 25kΩ 500kΩ www.ti.com INA950-SEP SBOSAK8 – MARCH 2025 Copyright © 2025 Texas Instruments Incorporated Submit Document Feedback 13 Product Folder Links: INA950-SEP |
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