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IRFP23N50LPBF Datasheet(PDF) 4 Page - International Rectifier

Part # IRFP23N50LPBF
Description  HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190廓 , Trr typ. = 170ns , ID = 23A )
PDF  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFP23N50LPBF Datasheet(HTML) 4 Page - International Rectifier

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IRFP23N50LPbF
4
www.irf.com
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
0
100
200
300
400
500
600
VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
Fig 8. Typical Source-Drain Diode
Forward Voltage
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
TJ = 25°C
TJ = 150°C
VGS = 0V
Fig 7. Typical Gate Charge vs.
Gate-to-Source Voltage
0
24
48
72
96
120
0
2
5
7
10
12
Q , Total Gate Charge (nC)
G
I =
D
23
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
Fig 6. Typ. Output Capacitance
Stored Energy vs. VDS



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