IRFP23N50LPbF

02/11/04

SMPS MOSFET

TO-247AC

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise

immunity

.

Applications

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control applications

• Lead-Free

500V

0.190

Ω

170ns 23A

Absolute Maximum Ratings

Parameter

Max.

Units

23

15

A

Pulsed Drain Current

™

92

370

W

Linear Derating Factor

2.9

W/°C

Gate-to-Source Voltage

± 30

V

dv/dt

Peak Diode Recovery dv/dt

e

14

V/ns

Operating Junction and

-55 to + 150

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Mounting torque, 6-32 or M3 screw

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

––– –––

23

MOSFET symbol

(Body Diode)

A

showing the

Pulsed Source Current

––– –––

92

integral reverse

(Body Diode)

Ù

p-n junction diode.

Diode Forward Voltage

––– –––

1.5

V

Reverse Recovery Time

––– 170 250

ns

––– 220 330

f

Reverse Recovery Charge

––– 560 840

––– 980 1500

f

Reverse Recovery Current

–––

7.6

11

A

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

10lb

xin (1.1Nxm)

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