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TPCP8201 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPCP8201 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 7 page ![]() TPCP8201 2007-01-16 4 Drain current ID (A) RDS (ON) – ID Gate −source voltage VGS (V) ID – VGS Common source VDS = 10 V Pulse test Ta = −55°C 25 100 Gate-source voltage VGS (V) VDS – VGS Drain −source voltage VDS (V) ID – VDS 5 4 2 1 0 VGS = 2.8 V Common source Ta = 25°C Pulse test 3.2 4.5 3.0 3.8 6.0 3.5 10 3 Drain −source voltage VDS (V) ID – VDS Drain current ID (A) ⎪Yfs⎪ – ID VGS = 2.8 V Common source Ta = 25°C Pulse test 3.8 6.0 4.5 3.0 10 3.5 3.2 ID = 4A Common source Ta = 25℃ Pulse test 2 1 Common source VDS = 10 V Pulse test 25 100 Ta = −55°C 10 0.1 1 10 30 100 Common source Ta = 25°C Pulse test VGS = 10V 4.5 0 0.8 1.0 0.2 0.4 0.6 8.0 8.0 10 8 4 2 0 6 0 4 5 1 2 3 0 0 4 5 1 2 3 8 6 2 4 0 0 8 10 2 4 6 2.0 1.6 0.8 0.4 1.2 0.1 0 10 1 0.3 1 3 100 10 |
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