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TPCP8201 Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part # TPCP8201
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
PDF  7 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCP8201 Datasheet(HTML) 5 Page - Toshiba Semiconductor

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TPCP8201
2007-01-16
5
Drain
−source voltage VDS (V)
Capacitance – VDS
0.1
1
10
100
1000
1
3
5
10
30 50
100
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25°C
Ciss
Coss
Crss
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain-source voltage VDS (V)
IDR – VDS
Ambient temperature Ta (°C)
Vth – Ta
0
1
3
−80
−40
0
40
80
120
160
Common source
VDS = 10 V
ID = 200μA
Pulse test
2
160
−40
0
40
80
120
−80
Common source
Pulse test
120
80
40
0
ID = 4A
2A
VGS = 10V
VGS = 4.5V
ID = 4, 2, 1A
1A
0
0.1
Common source
Ta
= 25°C
Pulse test
-0.2
0.3
0.5
1
3
5
10
-0.6
-0.8
-1.2
VGS = 0 V
5.0
3.0
1.0
10
-0.4
-1.0
Total gate charge Qg (nC)
Dynamic input/output
characteristics
0
4
8
Common source
ID = 4.0A
Ta
= 25°C
Pulse test
VDD = 24V
VDS
VGS
12
16
20
10
0
15
10
0
5
15
12
6
24
12
VDD = 6V
5
100
60
20
30
25
0.3
Ambient temperature Ta (°C)
PD – Ta
2.0
0.8
0
0
25
50
125
150
0.4
1.2
1.6
200
(1)
(2)
(3)
(4)
75
100
175
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t
= 5 s



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